? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1000 v v dgr t j = 25 c to 150 c, r gs = 1m 1000 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c7a i dm t c = 25 c, pulse width limited by t jm 18 a i a t c = 25 c7a e as t c = 25 c 300 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g ds99924a(10/09) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 1000 v v gs(th) v ds = v gs , i d = 1ma 3.0 6.0 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 15 a t j = 125 c 1.0 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 1.9 polar tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic rectifier ixfa7n100p IXFP7N100P v dss = 1000v i d25 = 7a r ds(on) 1.9 g = gate d = drain s = source tab = drain to-263 aa (ixfa) g s d (tab) g d s to-220ab (ixfp) d (tab) features z international standard packages z fast intrinsic rectifier z avalanche rated z low r ds(on) and q g z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls
ixys reserves the right to change limits, test conditions, and dimensions. ixfa7n100p IXFP7N100P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 3.6 6.0 s r gi gate input resistance 1.8 c iss 2590 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 158 pf c rss 26 pf t d(on) 25 ns t r 49 ns t d(off) 42 ns t f 44 ns q g(on) 47 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 21 nc q gd 21 nc r thjc 0.42 c/w r thcs to-220 0.50 c/w note 1. pulse test, t 300 s, duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max i s v gs = 0v, note1 7 a i sm repetitive, pulse width limited by t jm 28 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 300 ns q rm 0.4 c i rm 4.0 a i f = 3.5a, -di/dt = 100a/ s v r = 100v to-220 (ixfp) outline pins: 1 - gate 2 - drain 3 - source 4 - drain to-263 (ixfa) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. collector 3. emitter 4. collector bottom side
? 2009 ixys corporation, all rights reserved fig. 1. output characteristics @ tj = 25oc 0 1 2 3 4 5 6 7 02468101214 v ds - volts i d - amperes v gs = 10v 8v 7 v 5 v 6 v fig. 2. extended output characteristics @ tj = 25oc 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 8v 7 v 6 v 5 v fig. 3. output characteristics @ t j = 125oc 0 1 2 3 4 5 6 7 0 3 6 9 121518212427 v ds - volts i d - amperes v gs = 10v 8v 5 v 7v 6v fig. 4. r ds(on) normalized to i d = 3.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 7a i d = 3.5a fig. 5. r ds(on) normalized to i d = 3.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 02468101214 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes ixfa7n100p IXFP7N100P
ixys reserves the right to change limits, test conditions, and dimensions. ixfa7n100p IXFP7N100P ixys ref: f_7n100p(56)9-16-08 fig. 7. input admittance 0 2 4 6 8 10 12 14 4.04.55.05.56.06.57.07.58.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 0246810121416 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 0.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 12 14 16 0 10203040506070 q g - nanocoulombs v gs - volts v ds = 500v i d = 3.5a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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